Title :
Single-crystal dielectric resonators for low-temperature electronics applications
Author :
Knupka, J. ; Mazierska, Janina
Author_Institution :
Dept. of Electron., Warsaw Univ. of Technol., Poland
fDate :
7/1/2000 12:00:00 AM
Abstract :
Computed properties of high-Q factor sapphire, YAG, SrLaAlO4 , LaAlO3, rutile, and quartz dielectric resonators (DR) operating on whispering-gallery TE011 and TE0.1δ modes are presented in this paper. Resonators with a superconducting metal or partly superconducting partly metal shield are considered. For whispering-gallery-mode resonators, dielectric losses determine the upper limit for their Q factors, while for TE011-mode resonators, their Q factors are usually limited by conductor losses. Single-crystal TE0.1δ-mode resonators would have Q factors determined by both dielectric and conductor losses, and dominant loss mechanism depends on crystal losses and shield geometry. Geometric factors that allow evaluation of conductor losses of TE011- and TE0.1δ-mode resonators are given for different DR structures
Keywords :
Q-factor; crystal resonators; dielectric losses; dielectric resonators; garnets; lanthanum compounds; permittivity; sapphire; strontium compounds; titanium compounds; yttrium compounds; Al2O3; LaAlO3; SiO2; SrLaAlO4; TiO2; YAG; YAl5O12; conductor losses; crystal losses; dielectric losses; high-Q factor; low-temperature electronics applications; partly superconducting partly metal shield; quartz; rutile; sapphire; shield geometry; single-crystal dielectric resonators; superconducting metal shield; whispering-gallery modes; Anisotropic magnetoresistance; Ceramics; Conductors; Dielectric losses; Dielectric materials; Permittivity; Resonance; Superconducting microwave devices; Surface resistance; Temperature;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
