• DocumentCode
    1361808
  • Title

    Single-crystal dielectric resonators for low-temperature electronics applications

  • Author

    Knupka, J. ; Mazierska, Janina

  • Author_Institution
    Dept. of Electron., Warsaw Univ. of Technol., Poland
  • Volume
    48
  • Issue
    7
  • fYear
    2000
  • fDate
    7/1/2000 12:00:00 AM
  • Firstpage
    1270
  • Lastpage
    1274
  • Abstract
    Computed properties of high-Q factor sapphire, YAG, SrLaAlO4 , LaAlO3, rutile, and quartz dielectric resonators (DR) operating on whispering-gallery TE011 and TE0.1δ modes are presented in this paper. Resonators with a superconducting metal or partly superconducting partly metal shield are considered. For whispering-gallery-mode resonators, dielectric losses determine the upper limit for their Q factors, while for TE011-mode resonators, their Q factors are usually limited by conductor losses. Single-crystal TE0.1δ-mode resonators would have Q factors determined by both dielectric and conductor losses, and dominant loss mechanism depends on crystal losses and shield geometry. Geometric factors that allow evaluation of conductor losses of TE011- and TE0.1δ-mode resonators are given for different DR structures
  • Keywords
    Q-factor; crystal resonators; dielectric losses; dielectric resonators; garnets; lanthanum compounds; permittivity; sapphire; strontium compounds; titanium compounds; yttrium compounds; Al2O3; LaAlO3; SiO2; SrLaAlO4; TiO2; YAG; YAl5O12; conductor losses; crystal losses; dielectric losses; high-Q factor; low-temperature electronics applications; partly superconducting partly metal shield; quartz; rutile; sapphire; shield geometry; single-crystal dielectric resonators; superconducting metal shield; whispering-gallery modes; Anisotropic magnetoresistance; Ceramics; Conductors; Dielectric losses; Dielectric materials; Permittivity; Resonance; Superconducting microwave devices; Surface resistance; Temperature;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.853471
  • Filename
    853471