DocumentCode :
136181
Title :
Improved ion source stability using H2 co-gas for fluoride based dopants
Author :
Tseh-Jen Hsieh ; Colvin, Neil
Author_Institution :
Axcelis Technol. Inc., Beverly, MA, USA
fYear :
2014
fDate :
June 26 2014-July 4 2014
Firstpage :
1
Lastpage :
4
Abstract :
Fluoride based gases are commonly used in the ion implantation. Gases such as GeF4, SiF4 use as pre-amorphization species and BF3 is for high dose p-type BF2 and 11Boron can be a productivity challenge for conventional ion implanters used for semi-conductor device applications. As device geometries continuously shrink, there is a trend to deliver higher beam currents at lower energies, with a corresponding reduction in particles and metal contamination.
Keywords :
amorphisation; fluorine; ion implantation; ion sources; semiconductor doping; F; beam currents; device geometries; fluoride based dopants; hydrogen co-gas; improved ion source stability; ion implantation; ion implanters; metal contamination; preamorphization; semiconductor device applications; Contamination; Hydrogen; Implants; Ion sources; Particle beams; Tungsten; Doping Impurity Implantation; Ion Sources; Ion implantation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
Type :
conf
DOI :
10.1109/IIT.2014.6940042
Filename :
6940042
Link To Document :
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