A Computational Study of Dopant-Segregated Schottky Barrier MOSFETs

Author

Zeng, Lang ; Liu, Xiao Yan ; Zhao, Yu Ning ; He, Yu Hui ; Du, Gang ; Kang, Jin Feng ; Han, Ru Qi

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

9

Issue

1

fYear

2010

Firstpage

108

Lastpage

113

Abstract

A dopant-segregated Schottky barrier MOSFET is simulated by Monte Carlo method in this paper. The feature that dopant-segregated structure can improve on-current is revealed. The influence of dopant-segregated structure parameters on device performance is investigated, and the guideline for device design optimization is that the dopant-segregated region should overlay the whole Schottky barrier region. Some carrier transport details are also demonstrated here. The maximal velocities at source and drain sides all decrease with the increase of dopant-segregated region length. The maximal velocity at source side shows saturation with the existence of dopant-segregated structure when drain voltage increases while the maximal velocity at drain side shows no saturation.

Keywords

MOSFET; Monte Carlo methods; Schottky barriers; Schottky gate field effect transistors; carrier mobility; semiconductor doping; Monte Carlo method; carrier transport; device design optimization; dopant-segregated Schottky barrier MOSFETs; drain voltage; maximal velocity; Carrier transport; Monte Carlo method; Schottky barrier MOSFETs; dopant-segregated structure;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2009.2031230

Filename

5229361