Analysis of Main Degradation in Lasers With p-/n-Type InP Buried Layers Using OBIC Technique

Author

Takeshita, Tatsuya ; Ishii, Hiroyuki

Author_Institution

Nippon Telegraph & Telephone (NTT) Photonics Labs., NTT Corp., Atsugi, Japan

Volume

12

Issue

1

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

37

Lastpage

43

Abstract

The main degradation of the t^0.5 deterioration property (second-stage degradation) in lasers during constant-power aging is investigated by using the optical beam-induced current technique. We clarify that defects that cause this second-stage degradation diffuse mainly from around the regrown interface of the p-type InP cladding layer above the active layer to the active layer via the separate confinement heterostructure layer.

Keywords

III-V semiconductors; OBIC; ageing; failure analysis; indium compounds; laser reliability; quantum well lasers; InP; OBIC; cladding layer; confinement heterostructure; constant-power aging; degradation; optical beam-induced current; quantum well lasers; second-stage degradation; t0.5 deterioration property; Aging; Degradation; Distributed feedback devices; Indium phosphide; Measurement by laser beam; Wavelength measurement; Aging; failure analysis; indium compounds; laser reliability; photon beams; quantum well lasers; semiconductor lasers;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2011.2173496

Filename

6060902