Title :
Quantum dot resonant cavity photodiode with operation near 1.3 μm wavelength
Author :
Campbell, J.C. ; Huffaker, D.L. ; Deng, H. ; Deppe, D.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
7/17/1997 12:00:00 AM
Abstract :
It is shown that strained-layer InGaAs quantum dots grown on GaAs substrates can extend the operating wavelength of GaAs-based optoelectronic devices to wavelengths near 1.3 μm. Specifically a 1.27 μm resonant-cavity photodiode with a quantum dot absorbing region is demonstrated. This photodiode exhibits a peak external quantum efficiency of 49% with a spectral bandwidth of 1.2 nm
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical resonators; photodiodes; semiconductor quantum dots; 1.27 micron; 49 percent; GaAs; GaAs substrate; InGaAs; optoelectronic device; quantum efficiency; resonant cavity photodiode; spectral bandwidth; strained-layer InGaAs quantum dot;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970906
