DocumentCode :
1361973
Title :
A New Concept of High-Voltage DC–DC Conversion Using Asymmetric Voltage Distribution on the Switch Pairs and Hybrid ZVS–ZCS Scheme
Author :
Wang, Huai ; Chung, Henry Shu-Hung ; Ioinovici, Adrian
Author_Institution :
Center for Power Electron., City Univ. of Hong Kong, Kowloon, China
Volume :
27
Issue :
5
fYear :
2012
fDate :
5/1/2012 12:00:00 AM
Firstpage :
2242
Lastpage :
2259
Abstract :
A new concept of high-voltage dc-dc power conversion is presented in this paper. Its distinctive feature lies in distributing the high input voltage asymmetrically between two primary-side series-connected switch pairs. This allows using switches of optimal ratings in their respective class: the low-voltage switch pair implemented with MOSFETs only, and the high-voltage switch pair implemented with insulated gate bipolar transistors (IGBTs) only. As the switches in a switch pair are of the same type and voltage rating, they are maximally utilized. With an active snubber on the secondary side of the isolation transformer, a hybrid zero-voltage-switching-zero-current-switching (ZCS) scheme, which is different from the zero-voltage and zero-current-switching technique, is realized and makes all IGBTs be zero-current-switched and all MOSFETs be zero-voltage-switched from very light load to full load condition with minimal circulating energy. The ZCS snubber energy is completely released to the load, leading also to a duty-cycle gain. The operating principles, dc analysis, and design guidelines will be given. A 2-kW, 1500/48-V experimental prototype has been built and evaluated. The measured efficiency of the converter is found to be 92.4% at the rated condition.
Keywords :
DC-DC power convertors; field effect transistor switches; insulated gate bipolar transistors; power bipolar transistors; zero current switching; zero voltage switching; IGBT; MOSFET; ZCS snubber energy; active snubber; asymmetric voltage distribution; high-voltage DC-DC conversion; high-voltage switch pair; hybrid ZVS-ZCS scheme; hybrid zero-voltage-switching-zero-current-switching scheme; insulated gate bipolar transistors; power 2 kW; primary-side series-connected switch pairs; Insulated gate bipolar transistors; MOSFETs; Snubbers; Switches; Zero current switching; Zero voltage switching; DC–DC power conversion; high input voltage; soft switching;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2011.2173588
Filename :
6060920
Link To Document :
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