Temperature dependence of lasing wavelength in a GaInNAs laser diode

The temperature dependence of lasing wavelength in 1.2-μm or 1.3-μm-range GaInNAs edge-emitting laser diodes (LD) was found to be small. It is almost independent of the characteristic temperature (T₀) and is equivalent to the temperature shift of the bandgap wavelength of GaInNAs (0.42 nm//spl deg/C). Since the dependence is smaller than that of 1.3-μm-range conventional InGaAsP LD´s and also smaller than the required value (<0.48 nm//spl deg/C), it is concluded that the GaInNAs LD´s are promising for use as 1.3-μm-range light sources because of their lasing-wavelength stability against temperature shift and a high T₀. The small dependence is due to the small effect of band filling on lasing wavelength from the deep quantum well in GaInNAs LD´s.