Calculated electron and hold spatial ionization profiles in bulk GaAs and superlattice avalanche photodiodes

Author

Brennan, Kevin

Author_Institution

Sch. of Electr. Eng. & Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

Volume

24

Issue

10

fYear

1988

fDate

10/1/1988 12:00:00 AM

Firstpage

2001

Lastpage

2006

Abstract

The author presents ensemble Monte Carlo calculations of the electron and hole spatial and temporal impact ionization profiles in bulk GaAs and GaAs-AlGaAs superlattice structures. The results indicate that transient effects are much more pronounced for electrons than for holes, which greatly influences the dynamics of each type. It is concluded that the heterointerface plays less of a role in the hole ionization process than that for electrons due to the small valence band edge discontinuity and to the weaker nonlinear, transient effects experiences by the holes

Keywords

III-V semiconductors; Monte Carlo methods; avalanche photodiodes; electron impact; gallium arsenide; GaAs; GaAs-AlGaAs; III-V semiconductors; Monte Carlo calculations; electrons; heterointerface; hold spatial ionization profiles; hole ionization process; superlattice avalanche photodiodes; superlattice structures; valence band edge discontinuity; Avalanche photodiodes; Bandwidth; Charge carrier processes; Electrons; Gallium arsenide; Impact ionization; Monte Carlo methods; Noise reduction; Steady-state; Superlattices;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.8535

Filename

8535