• DocumentCode
    1362043
  • Title

    Deposition of nitrogen doped tetrahedral amorphous carbon (ta-C:N) films by ion beam assisted filtered cathodic vacuum arc

  • Author

    Cheah, L.K. ; Xu, Shi ; Tay, B.K.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
  • Volume
    33
  • Issue
    15
  • fYear
    1997
  • fDate
    7/17/1997 12:00:00 AM
  • Firstpage
    1339
  • Lastpage
    1340
  • Abstract
    An alternative approach to deposit ta-C:N films by ion assisted filtered cathodic vacuum arc (IAFCVA) is presented and compared with ta-C films prepared by FCVA under nitrogen partial pressure. The electronic properties are strongly dependent on nitrogen partial pressure for both methods although the efficiency of doping is higher for IAFCVA
  • Keywords
    amorphous semiconductors; carbon; elemental semiconductors; ion beam applications; nitrogen; semiconductor doping; semiconductor growth; semiconductor thin films; vacuum deposition; wide band gap semiconductors; C:N; doping efficiency; electronic properties; ion beam assisted filtered cathodic vacuum arc deposition; nitrogen doped tetrahedral amorphous carbon film; nitrogen partial pressure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970901
  • Filename
    606093
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1362043