Title :
Deposition of nitrogen doped tetrahedral amorphous carbon (ta-C:N) films by ion beam assisted filtered cathodic vacuum arc
Author :
Cheah, L.K. ; Xu, Shi ; Tay, B.K.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
fDate :
7/17/1997 12:00:00 AM
Abstract :
An alternative approach to deposit ta-C:N films by ion assisted filtered cathodic vacuum arc (IAFCVA) is presented and compared with ta-C films prepared by FCVA under nitrogen partial pressure. The electronic properties are strongly dependent on nitrogen partial pressure for both methods although the efficiency of doping is higher for IAFCVA
Keywords :
amorphous semiconductors; carbon; elemental semiconductors; ion beam applications; nitrogen; semiconductor doping; semiconductor growth; semiconductor thin films; vacuum deposition; wide band gap semiconductors; C:N; doping efficiency; electronic properties; ion beam assisted filtered cathodic vacuum arc deposition; nitrogen doped tetrahedral amorphous carbon film; nitrogen partial pressure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970901
