Title :
High-Performance Al–Sn–Zn–In–O Thin-Film Transistors: Impact of Passivation Layer on Device Stability
Author :
Yang, Shinhyuk ; Cho, Doo-Hee ; Ryu, Min Ki ; Park, Sang-Hee Ko ; Hwang, Chi-Sun ; Jang, Jin ; Jeong, Jae Kyeong
Author_Institution :
Transparent Electron. Team, Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
We fabricated high-performance thin-film transistors (TFTs) with an amorphous-Al-Sn-Zn-In-O (a-AT-ZIO) channel deposited by cosputtering using a dual Al-Zn-O and In-Sn-O target. The fabricated AT-ZIO TFTs, which feature a bottom-gate and bottom-contact configuration, exhibited a high field-effect mobility of 31.9 cm2/V??s, an excellent subthreshold gate swing of 0.07 V/decade, and a high I on/off ratio of >109, even below the process temperature of 250??C. In addition, we demonstrated that the temperature and bias-induced stability of the bottom-gate TFT structure can significantly be improved by adopting a suitable passivation layer of atomic-layer-deposition-derived Al2O3 thin film.
Keywords :
alumina; aluminium compounds; amorphous semiconductors; passivation; thin film transistors; tin compounds; zinc compounds; AlSnZnInO-Al2O3; TFT device stability; amorphous channel; amorphous-Al-Sn-Zn-In-O thin film transistor; atomic layer deposition film; bottom-contact TFT structure; bottom-gate TFT structure; cosputtering deposition; high field-effect mobility; multicomponent amorphous oxide semiconductor; passivation layer; subthreshold gate swing; temperature 250 degC; Amorphous semiconductor; multicomponent oxide semiconductor; passivation; sputtering; stability; thin-film transistors (TFTs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2036944
