Metal-oxide semiconductor field-effect transistors using Schottky barrier drains

1.2 μm p-channel MOSFETs with a TiSi₂-Si barrier drain and a p⁺ implanted source have been fabricated. Parasitic drain-to-n-well-to-p⁺-source bipolar transistor measurements showed no current gain since the Schottky-barrier-drain (SBDR) does not inject minority carriers (holes) to the n-well base. The SBDR could be useful for preventing latch-up in integrated CMOS RF amplifiers