The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters

Author

Bordallo, C.C.M. ; Teixeira, F.F. ; Silveira, M.A.G. ; Martino, Joao Antonio ; Agopian, Paula G. D. ; Simoen, Eddy ; Claeys, Cor

Author_Institution

LSI/PSI, Univ. of Sao Paulo, Sao Paulo, Brazil

fYear

2014

fDate

1-5 Sept. 2014

Firstpage

1

Lastpage

4

Abstract

In this work, the effect of the X-Ray radiation dose rate on n and p Triple-Gate SOI FinFET device characteristics is investigated. The threshold voltage shift, the subthreshold slope shift, the maximum transconductance and the I_ON/I_OFF ratio were analyzed. In nMuGFETs the characteristics are always degraded due to the increase of the back conduction and for pMuGFETs, the devices have their subthreshold region characteristics improved by the decrease of back conduction. Lower dose rates of X-Ray radiation are shown to be more effective for the trapping of charges and the formation of interface traps than the use of higher doses rates.

Keywords

MOSFET; silicon-on-insulator; I_ON-I_OFF ratio; back conduction; interface traps; multiple-gates transistors; nMuGFET; subthreshold region characteristics; subthreshold slope shift; threshold voltage shift; triple-gate SOI FinFET parameters; x-ray radiation dose rate; Bismuth; Charge carrier processes; Geometry; Physics; Radiation effects; Back conduction; Dose rate effects; Multiple-Gate MOSFETs (MuGFETs); X-ray radiation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on

Conference_Location

Aracaju

Type

conf

DOI

10.1109/SBMicro.2014.6940085

Filename

6940085