TeO2-ZnO thin films with gold nanoparticles as passivating materials for power devices applications

TeO₂-ZnO thin films with gold nanoparticles have been grown by magnetron co-sputtering process at the RF power around 50W followed by annealing at 325°C during 10 and 20h. The electrical properties of these films were analyzed from Capacitance-Voltage (C-V) and Current-Voltage (I-V) characteristics and were correlated to the size and distribution of nanoparticles obtained with aid of transmission electron microscopy. It was inferred, from C-V and I-V curves, a significant leakage current in the inversion region for all samples. Also, the leakage current increased and the flatband voltage shift decreased when the thickness of the TeO₂-ZnO films, annealed at 325°C for 20h, was decreased from 500 to 10nm. These results showed that the leakage current of the films can be controlled by varying the thickness, which makes them potential passivating materials for power devices applications.