Temperature and back-gate bias influence on the operation of lateral SOI PIN photodiodes

Author

Novo, Carla ; Giacomini, Renato ; Doria, R.T. ; Afzalian, Aryan ; Flandre, Denis

Author_Institution

Electr. Eng. Dept., Centro Univ. da FEI, São Bernardo do Campo, Brazil

fYear

2014

fDate

1-5 Sept. 2014

Firstpage

1

Lastpage

4

Abstract

This paper presents a study of back-gate bias and temperature influence on the operation of lateral SOI PIN photodiodes. Experimental results showed that the operation mode of the photodiodes is affected by back-gate bias, modifying the photogenerated current, which has a strong influence on the illuminated to dark ratio, as well as, on the quantum efficiency. At lower temperatures, the results showed that the quantum efficiency can be improved by biasing the device in inversion mode, while at higher temperatures, the accumulation mode showed a higher illuminated to dark ratio.

Keywords

elemental semiconductors; p-i-n photodiodes; photoconductivity; photoemission; silicon; silicon-on-insulator; Si; accumulation mode; back-gate bias influence; dark ratio illumination; inversion mode; lateral SOI PIN photodiode; photogenerated current; quantum efficiency; temperature bias influence; Kelvin; Medical services; Photoconductivity; Photodiodes; Radiative recombination;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on

Conference_Location

Aracaju

Type

conf

DOI

10.1109/SBMicro.2014.6940097

Filename

6940097