Title :
Design Strategies for InGaN-Based Green Lasers
Author :
Venkatachalam, Anusha ; Klein, Benjamin ; Ryou, Jae-Hyun ; Shen, Shyh-Chiang ; Dupuis, Russell D. ; Yoder, P. Douglas
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
A design parameter subspace is explored to suggest epitaxial layer structures which maximize gain spectral density at a target wavelength for green In¿Ga1-¿N-based single quantum well active regions. The dependence of the fundamental optical transition energy on the thickness and composition of barriers and wells is discussed, and the sensitivity of gain spectral density to design parameters, including the choice of buffer layer material, is investigated.
Keywords :
III-V semiconductors; buffer layers; epitaxial layers; gallium compounds; indium compounds; semiconductor lasers; InGaN; buffer layer material; epitaxial layer structures; green lasers; optical transition energy; single quantum well active regions; spectral density; Buffer layers; Capacitive sensors; Composite materials; Epitaxial layers; Gallium nitride; Optical buffering; Optical design; Optical polarization; Optical sensors; Piezoelectric polarization; InGaN; optical gain; polarization charges; quantum confined Stark effect; quantum wells; strain; transition energy;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2009.2029348
