Design Strategies for InGaN-Based Green Lasers

Author

Venkatachalam, Anusha ; Klein, Benjamin ; Ryou, Jae-Hyun ; Shen, Shyh-Chiang ; Dupuis, Russell D. ; Yoder, P. Douglas

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

46

Issue

2

fYear

2010

Firstpage

238

Lastpage

245

Abstract

A design parameter subspace is explored to suggest epitaxial layer structures which maximize gain spectral density at a target wavelength for green In_Â¿Ga_1-Â¿N-based single quantum well active regions. The dependence of the fundamental optical transition energy on the thickness and composition of barriers and wells is discussed, and the sensitivity of gain spectral density to design parameters, including the choice of buffer layer material, is investigated.

Keywords

III-V semiconductors; buffer layers; epitaxial layers; gallium compounds; indium compounds; semiconductor lasers; InGaN; buffer layer material; epitaxial layer structures; green lasers; optical transition energy; single quantum well active regions; spectral density; Buffer layers; Capacitive sensors; Composite materials; Epitaxial layers; Gallium nitride; Optical buffering; Optical design; Optical polarization; Optical sensors; Piezoelectric polarization; InGaN; optical gain; polarization charges; quantum confined Stark effect; quantum wells; strain; transition energy;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2009.2029348

Filename

5357477