Analysis, design, and fabrication of GaAlAs/GaAs DFB lasers with modulated stripe width structure for complete single longitudinal mode oscillation

Author

Nakano, Yoshiaki ; Tada, Kunio

Author_Institution

Dept. of Electr. Eng., Tokyo Univ., Japan

Volume

24

Issue

10

fYear

1988

fDate

10/1/1988 12:00:00 AM

Firstpage

2017

Lastpage

2033

Abstract

Complete single longitudinal mode operation of a GaAlAs/GaAs distributed-feedback (DFB) laser has been accomplished by making use of a modulated stripe width (MSW) structure, which is characterized by its simple configuration and versatility, compared with equivalent schemes. The coupled-mode equations are transformed into the characteristic equation for the DFB laser with arbitrary index modulation which has a form convenient for numerical analysis. Two specific examples of the stripe width modulation, namely, stepped and symmetric linear modulations, are then analyzed by making use of the equations. Optimum design of the stripe shape is subsequently carried out by assuming a particular waveguide structure. A GaAlAs/GaAs DFB laser having stepped-width modulation was fabricated by using a double-channel planar buried heterostructure

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; laser modes; optical modulation; optical workshop techniques; DFB lasers; GaAlAs-GaAs; III-V semiconductors; MSW; arbitrary index modulation; coupled-mode equations; double-channel planar buried heterostructure; longitudinal mode oscillation; modulated stripe width structure; numerical analysis; Equations; Gallium arsenide; Laser modes; Numerical analysis; Optical coupling; Optical design; Optical device fabrication; Shape; Waveguide components; Waveguide lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.8537

Filename

8537