Indium gallium arsenide microwave power transistors

Author

Johnson, Gregory A. ; Kapoor, Vik J. ; Shokrani, Mohsen ; Messick, Louis J. ; Nguyen, Richard ; Stall, Richard A. ; McKee, Mark A.

Author_Institution

Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA

Volume

39

Issue

7

fYear

1991

fDate

7/1/1991 12:00:00 AM

Firstpage

1069

Lastpage

1075

Abstract

Depletion-mode InGaAs microwave power MISFETs with 1-μm gate lengths and up to 1-mm gate widths have been fabricated using an ion-implanted process. The devices employed a plasma-deposited silicon/silicon dioxide gate insulator. The DC current-voltage (I -V) characteristics and RF power performance at 9.7 GHz are presented. The output power, power-added efficiency, and power gain as a function of input power are reported. An output power of 1.07 W at 9.7 GHz with a corresponding power gain and power-added efficiency of 4.3 dB and 38%, respectively, was obtained. The large-gate-width devices provided over twice the previously reported output power for InGaAs MISFETs at X-band. In addition, the first report of RF output stability of InGaAs MISFETs over 24 h period is also presented. An output power stability within 1.2% over 24 h of continuous operation was achieved. In addition, a drain current drift of 4% over 10⁴ s was obtained

Keywords

III-V semiconductors; gallium arsenide; indium compounds; insulated gate field effect transistors; power transistors; solid-state microwave devices; 1 micron; 1 mm; 1.07 W; 10000 s; 24 h; 38 percent; 4.3 dB; 9.7 GHz; I/V characteristics; InGaAs; InGaAs-Si-SiO₂; RF output stability; RF power performance; SHF; SiO₂ gate insulator; X-band; continuous operation; depletion mode; drain current drift; gate lengths; gate widths; input power; ion-implanted process; large-gate-width devices; microwave power MISFETs; microwave power transistors; output power; output power stability; power gain; power-added efficiency; semiconductors; Indium gallium arsenide; MISFETs; Microwave devices; Plasma devices; Plasma properties; Power generation; Power transistors; Radio frequency; Silicon; Stability;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.85371

Filename

85371