Title :
Electrolyte-Insulator-Semiconductor field effect device for pH detecting
Author :
Cesar, R.R. ; Barros, A.D. ; Doi, I. ; Diniz, Jose A. ; Swart, J.W.
Author_Institution :
Sch. of Electr. & Comput. Eng., Univ. of Campinas, Campinas, Brazil
Abstract :
This work presents a device for pH measurements called Electrolyte-Insulator-Semiconductor (EIS), which operates as a Metal-Oxide-Semiconductor capacitor but instead of having the metal contact electrode, an electrolyte solution and a reference electrode are used to apply voltage. It was used TiO2 thin film as insulator and sensitive membrane. These films were obtained after rapid thermal oxidation of Ti thin films deposited by sputtering. They were structurally characterized by Raman and ellipsometry which reveal that the films present rutile crystal structure. We use capacitors to make the electrical characterization of TiO2 films in order to determine the annealing time that leads to the best thin film properties, defined by high dielectric constant value (high-k), lower charge density (Q0/q) and flat-band voltage (VFB) around -0.9V. EIS devices are tested through capacitance x voltage (CxV) measurements using different pH solutions. When in contact to the dielectric film, each pH value adds a contribution to the flat band voltage, resulting in a displacement of the CxV curve. It was possible to determine from the flat band voltage (VFB), the sensitivity of 41 mV/pH.
Keywords :
MIS capacitors; Raman spectra; crystal structure; electrolytes; ellipsometry; pH measurement; rapid thermal annealing; semiconductor thin films; sputter deposition; titanium compounds; CxV measurement; EIS devices; Raman spectra; TiO2; capacitance-voltage measurements; charge density; electrical characterization; electrolyte-insulator-semiconductor field effect device; ellipsometry; flat band voltage; flat-band voltage; high dielectric constant value; insulator; metal contact electrode; metal-oxide-semiconductor capacitor; pH detection; pH measurements; rapid thermal oxidation; reference electrode; rutile crystal structure; sensitive membrane; sputtering deposition; thin film properties; titanium thin film; Aluminum; Annealing; Biosensors; Capacitance; Capacitance measurement; Silicon; Sputtering; dielectric constant; titanium oxide;
Conference_Titel :
Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on
Conference_Location :
Aracaju
DOI :
10.1109/SBMicro.2014.6940127