• DocumentCode
    136261
  • Title

    Effect of the temperature on on Junctionless Nanowire Transistors electrical parameters down to 4K

  • Author

    Trevisoli, R. ; de Souza, M. ; Doria, R.T. ; Kilchtyska, Valeriya ; Flandre, Denis ; Pavanello, Marcelo Antonio

  • Author_Institution
    Electr. Enigeering Dept., Centro Univ. da FEI, São Bernardo do Campo, Brazil
  • fYear
    2014
  • fDate
    1-5 Sept. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The aim of this work is to analyze the operation of Junctionless Nanowire Transistors at liquid helium temperature, focusing the operation at linear regime. The drain current, the transconductance, the low field mobility, subthreshold slope, the interface trap density and the channel resistance are the key parameters under analysis.
  • Keywords
    MOSFET; nanoelectronics; MOSFETs; channel resistance; drain current; interface trap density; junctionless nanowire transistor electrical parameters; liquid helium temperature; low field mobility; subthreshold slope; temperature effect; transconductance; Helium; Logic gates; Junctionless Transistors; Liquid Helium Temperature; Low Field Mobility;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics Technology and Devices (SBMicro), 2014 29th Symposium on
  • Conference_Location
    Aracaju
  • Type

    conf

  • DOI
    10.1109/SBMicro.2014.6940134
  • Filename
    6940134
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=136261