Equivalent-circuit parameter extraction for cold GaAs MESFET´s

Author

Anholt, R. ; Swirhun, S.

Author_Institution

Gateway Modeling, Inc., Minneapolis, MN, USA

Volume

39

Issue

7

fYear

1991

fDate

7/1/1991 12:00:00 AM

Firstpage

1243

Lastpage

1247

Abstract

The physical basis of the cold-FET method for extracting parasitic resistances and inductances is examined. A method to obtain the source resistance from the gate-current dependence of the FET Z parameters is used to analyze FETs with different gate lengths. Inductance results for FETs with different gate widths suggest that inductance extrinsic to the gate fingers is dominant, and models of the gate inductance support this. The effects that possible dependences of the parasitic-FET equivalent-circuit parameters (ECPs) on the gate and drain bias can have on the extracted intrinsic-FET parameters are discussed.

Keywords

III-V semiconductors; Schottky gate field effect transistors; electric resistance; equivalent circuits; gallium arsenide; inductance; semiconductor device models; FET Z parameters; FET parasitics; GaAs; MESFETS; cold-FET method; drain bias; equivalent circuit parameter extraction; gate bias; gate inductance; gate lengths; gate widths; gate-current dependence; intrinsic-FET parameters; models; parasitic inductances; parasitic resistances; semiconductors; source resistance; Electrical resistance measurement; Fingers; Gallium arsenide; Inductance; MESFETs; Matrix converters; Microwave FETs; Parameter extraction; Scattering parameters; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.85396

Filename

85396