DocumentCode :
1362914
Title :
Wide tuning range W-band Colpitts VCO in 90 nm CMOS
Author :
Socher, Eran ; Jameson, Samuel
Author_Institution :
Sch. of Electr. Eng., Tel Aviv Univ., Tel Aviv, Israel
Volume :
47
Issue :
22
fYear :
2011
Firstpage :
1227
Lastpage :
1229
Abstract :
A compact wide tuning range design of a CMOS voltage-controlled oscillator (VCO) at W-band frequencies is presented. The design employs a differential Colpitts configuration, using a bufferless transformer output and nested inductors. The gate bias is used for frequency tuning that achieves a wide range of 93.7-100.7-GHz. A peak output power of 4.7-dBm with power efficiency of 5.5- is achieved at 98.8-GHz and the phase noise is around -80-dBc/Hz at 1-MHz offset across the tuning range. The VCO uses a silicon area of 0.15-mm2 including pads and, depending on bias, consumes between 6-63-mW of DC power.
Keywords :
CMOS integrated circuits; MIMIC; millimetre wave oscillators; phase noise; voltage-controlled oscillators; CMOS voltage-controlled oscillator; DC power; bufferless transformer output; frequency 93.7 GHz to 100.7 GHz; nested inductors; phase noise; power 6 mW to 63 mW; size 90 nm; wide tuning range W-band Colpitts VCO;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2011.2581
Filename :
6062007
Link To Document :
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