1.3 μm InAsP quantum well lasers grown by solid source MBE

Author

Mottahedeh, R. ; Haywood, S.K. ; Woodbridge, Karl ; Hopkinson, M. ; Hill, G. ; Rivers, A.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

Volume

145

Issue

1

fYear

1998

fDate

2/1/1998 12:00:00 AM

Firstpage

3

Lastpage

6

Abstract

The authors report the design, growth and optical properties of InAsP-InGaAsP and InAsP-InGaP lasers with compressively-strained quantum wells. Both tensile-strained and lattice matched quaternary barriers were investigated. Strain-compensated structures, i.e. those with tensile-strained barriers show narrow photoluminescence and X-ray diffraction linewidths indicating high crystalline quality. These devices were subsequently processed into ridge waveguide lasers and a threshold current of ~1 kA/cm² was obtained for a strain-compensated five well structure

Keywords

III-V semiconductors; X-ray diffraction; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; optical design techniques; optical fabrication; optical testing; photoluminescence; quantum well lasers; ridge waveguides; semiconductor device testing; waveguide lasers; 1.3 mum; InAsP quantum well lasers growth; InAsP-InGaAsP; InAsP-InGaP; InAsP-InGaP quantum well laser design; X-ray diffraction linewidths; compressively-strained quantum wells; high crystalline quality; lattice matched quaternary barriers; narrow photoluminescence; optical properties; ridge waveguide lasers; solid source MBE; strain-compensated five well structure; strain-compensated structures; tensile-strained; tensile-strained barriers; threshold current;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19981912

Filename

668000