• DocumentCode
    1362964
  • Title

    Hybrid-mode analysis of homogeneously and inhomogeneously doped low-loss slow-wave coplanar transmission lines

  • Author

    Wu, Ke ; Vahldieck, Rüdiger

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada
  • Volume
    39
  • Issue
    8
  • fYear
    1991
  • fDate
    8/1/1991 12:00:00 AM
  • Firstpage
    1348
  • Lastpage
    1360
  • Abstract
    A hybrid-mode analysis is presented to characterize the propagation properties of uniplanar slow-wave MIS (metal-insulator-semiconductor) coplanar transmission lines. The effect of homogeneous versus gradually inhomogeneous doping profile is investigated as well as the influence of the metal conductor losses and finite metallization thickness on the slow-wave factor and the overall losses. Numerical results indicate that thick-film MIS CPWs can support a slow-wave mode with moderate loss up to 40 GHz when the line dimensions are kept in the micrometer range. Furthermore, it is found that an inhomogeneous doping profile can reduce the overall losses and that the effect of metal conductor losses in heavily doped MIS structures is only marginal. On the other hand, in weakly doped or insulating GaAs material a lossy metal conductor leads to a higher propagation constant, exhibiting a negative slope with increasing frequency
  • Keywords
    doping profiles; metal-insulator-semiconductor devices; metallisation; transmission line theory; GaAs; MIS; doping profile; finite metallization thickness; hybrid-mode analysis; line dimensions; low-loss slow-wave coplanar transmission lines; metal conductor losses; propagation constant; propagation properties; slow-wave factor; uniplanar; Conducting materials; Conductors; Coplanar transmission lines; Doping profiles; Gallium arsenide; Inorganic materials; Insulation; Metal-insulator structures; Metallization; Propagation losses;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.85410
  • Filename
    85410