DocumentCode
1362964
Title
Hybrid-mode analysis of homogeneously and inhomogeneously doped low-loss slow-wave coplanar transmission lines
Author
Wu, Ke ; Vahldieck, Rüdiger
Author_Institution
Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada
Volume
39
Issue
8
fYear
1991
fDate
8/1/1991 12:00:00 AM
Firstpage
1348
Lastpage
1360
Abstract
A hybrid-mode analysis is presented to characterize the propagation properties of uniplanar slow-wave MIS (metal-insulator-semiconductor) coplanar transmission lines. The effect of homogeneous versus gradually inhomogeneous doping profile is investigated as well as the influence of the metal conductor losses and finite metallization thickness on the slow-wave factor and the overall losses. Numerical results indicate that thick-film MIS CPWs can support a slow-wave mode with moderate loss up to 40 GHz when the line dimensions are kept in the micrometer range. Furthermore, it is found that an inhomogeneous doping profile can reduce the overall losses and that the effect of metal conductor losses in heavily doped MIS structures is only marginal. On the other hand, in weakly doped or insulating GaAs material a lossy metal conductor leads to a higher propagation constant, exhibiting a negative slope with increasing frequency
Keywords
doping profiles; metal-insulator-semiconductor devices; metallisation; transmission line theory; GaAs; MIS; doping profile; finite metallization thickness; hybrid-mode analysis; line dimensions; low-loss slow-wave coplanar transmission lines; metal conductor losses; propagation constant; propagation properties; slow-wave factor; uniplanar; Conducting materials; Conductors; Coplanar transmission lines; Doping profiles; Gallium arsenide; Inorganic materials; Insulation; Metal-insulator structures; Metallization; Propagation losses;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.85410
Filename
85410
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