Spontaneous emission in semiconductor microcavity post lasers

Author

Bava, G.P. ; Debernardi, P.

Author_Institution

Dipt. di Elettronica, Politecnico di Torino, Italy

Volume

145

Issue

1

fYear

1998

fDate

2/1/1998 12:00:00 AM

Firstpage

37

Lastpage

42

Abstract

A complete and self-consistent model for the evaluation of spontaneous emission in microcavity semiconductor post lasers is presented. It takes into account the continuous electromagnetic field spectrum of the resonator and the carrier density dependence of all the parameters; in addition valence band mixing is included in the computation of the band structure. Both the total recombination rate due to spontaneous emission and the β factor are computed and discussed. Numerical examples are reported for λ/2 and λ cavities since both of them present interesting aspects. In particular for the second case the problem of lateral radiation is investigated

Keywords

carrier density; laser cavity resonators; laser theory; semiconductor device models; semiconductor lasers; spontaneous emission; β factor; λ cavities; λ/2 cavities; band structure; carrier density dependence; continuous electromagnetic field spectrum; lateral radiation; self-consistent model; semiconductor microcavity post lasers; spontaneous emission; total recombination rate; valence band mixing;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19981783

Filename

668005