W-band SPST transistor switches

Author

Takasu, H. ; Sasaki, F. ; Kawasaki, H. ; Tokuda, H. ; Kamihashi, S.

Author_Institution

Microwave Solid-State Dept., Toshiba Corp., Kawasaki, Japan

Volume

6

Issue

9

fYear

1996

Firstpage

315

Lastpage

316

Abstract

A single-pole, single-throw (SPST) transistor switch has been developed, Three types of switches, that is, GaAs MESFET, AlGaAs-GaAs HEMT, and pseudomorphic HEMT (PM-HEMT), have been fabricated, and the performances at W-band are compared. To reduce on-state resistance and off-state capacitance, gate length was varied as a parameter. Moreover, an inductance for resonance was installed in parallel to the off-state capacitance between source and drain to obtain a high isolation, A relatively low insertion loss of 1.6 dB and a high isolation over 20 dB at W-band have been obtained from the 0.8-μm gate length PM-HEMT.

Keywords

Schottky gate field effect transistors; capacitance; electric breakdown; field effect MIMIC; field effect transistor switches; gallium arsenide; high electron mobility transistors; inductance; losses; millimetre wave field effect transistors; 0.8 micron; 1.6 dB; 75 to 110 GHz; AlGaAs-GaAs; AlGaAs-GaAs HEMT; EHF; GaAs; GaAs MESFET; MM-wave switches; PHEMT; PM-HEMT; SPST transistor switches; W-band; breakdown voltage; high isolation; inductance; insertion loss; offstate capacitance; onstate resistance reduction; pseudomorphic HEMT; resonance; single-pole single-throw switches; Capacitance; Fabrication; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Insertion loss; MESFETs; Microwave FETs; Microwave transistors; Switches;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.535830

Filename

535830