DocumentCode :
1363257
Title :
Fluorinated 
as Charge-Trapping Layer for Nonvolatile Memory Applications
Author :
Huang, X.D. ; Sin, Johnny K O ; Lai, P.T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Volume :
58
Issue :
12
fYear :
2011
Firstpage :
4235
Lastpage :
4240
Abstract :
Charge-trapping properties of SrTiO3 with and without fluorine incorporation are investigated by using an Al/Al2O3/SrTiO3/SiO2/Si structure. The memory device with a fluorinated SrTiO3 film shows promising performance in terms of large memory window (8.8 V) by ±8-V sweeping voltage, large flatband-voltage (VFB) shift (2.5 V) at a low gate voltage of +6 V for 1 ms, negligible VFB shift after 105-cycle program/erase stressing, and improved data retention compared with that with out fluorine treatment. These advantages can be associated with generated deep-level traps, reduced leakage path, and enhanced strength of the film due to the fluorine incorporation.
Keywords :
random-access storage; strontium compounds; SrTiO3; charge-trapping layer; data retention; deep-level trap; flatband-voltage; fluorinated film; fluorine treatment; leakage path reduction; low gate voltage; memory window; nonvolatile memory application; program-erase stressing; sweeping voltage; time 1 ms; voltage -8 V; voltage 2.5 V; voltage 6 V; voltage 8 V; voltage 8.8 V; Aluminum oxide; Capacitors; Logic gates; MONOS devices; Nonvolatile memory; Silicon; $hbox{SrTiO}_{3}$ $k$
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2011.2169675
Filename :
6062402
Link To Document :
