• DocumentCode
    1363265
  • Title

    Improved Calculation of Charge Collection Probability From Within the Junction Well

  • Author

    Ong, Vincent K.S. ; Tan, Chee Chin ; Kurniawan, Oka ; Radhakrishnan, K.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
  • Volume
    58
  • Issue
    12
  • fYear
    2011
  • Firstpage
    4434
  • Lastpage
    4437
  • Abstract
    In this paper, the challenges to compute the charge collection probability from within an L-shaped junction well using the existing analytical expression are discussed. A solution is proposed to overcome these challenges. A good agreement has been found between the results computed using the proposed solution and those obtained from the finite-difference method and device simulator. The accuracy of the computed charge collection probability improves significantly when the proposed solution is used.
  • Keywords
    probability; semiconductor device measurement; semiconductor device models; semiconductor junctions; L-shaped junction well; analytical expression; charge collection probability; device simulator; finite-difference method; Accuracy; Computational modeling; Educational institutions; Frequency division multiplexing; Geometry; Junctions; Physics; Charge-carrier processes; semiconductor device measurement; semiconductor device modeling; simulation;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2169071
  • Filename
    6062404