DocumentCode :
1363270
Title :
Xerographic properties of a-Se:Te photoconductors
Author :
Kasap, Safa O. ; Baxendale, Mark ; Juhasz, Csaba
Author_Institution :
Dept. of Electr. Eng., Saskatchewan Univ., Saskatoon, Sask., Canada
Volume :
27
Issue :
4
fYear :
1991
Firstpage :
620
Lastpage :
626
Abstract :
It is shown that the dark decay of the electrostatic surface potential on a corona-charged a-Se:Te alloy photoreceptor occurs via electric field-enhanced xerographic depletion discharge (FEXDD) in which Poole-Frenkel-assisted thermal emission of holes from deep mobility-gap states and their subsequent sweep out generates a negative bulk space charge. The theoretical model development is applied to explain the observed experimental dark discharge data over a wide range of charging (initial) voltages. It is shown that although the time required for the surface potential to decay to its half value t1/2 initially increases with the charging voltage V0 at the highest charging voltage, t1/2 actually decreases with V0. Results obtained from cycled-up xerographic experiments on single and double-layer photoreceptors are also reviewed and discussed in conjunction with transient photoconductivity experiments
Keywords :
Poole-Frenkel effect; chalcogenide glasses; electrophotography; photoconducting devices; photoconducting materials; selenium; tellurium; Poole-Frenkel-assisted thermal emission; a-Se:Te photoconductors; amorphous Se:Te photoconductors; corona charging; cycled-up xerographic experiments; dark decay; deep mobility-gap states; double-layer photoreceptors; electric field-enhanced xerographic depletion discharge; electrostatic surface potential; holes; negative bulk space charge; photoreceptor; single layer photoreceptors; transient photoconductivity; Boats; Electrostatics; Industry Applications Society; Materials science and technology; Photoconductivity; Photoreceptors; Surface charging; Surface discharges; Tellurium; Voltage measurement;
fLanguage :
English
Journal_Title :
Industry Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-9994
Type :
jour
DOI :
10.1109/28.85473
Filename :
85473
Link To Document :
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