High-Performance Junction Barrier Schottky Rectifier With Optimized Structure

Junction barrier Schottky (JBS) rectifiers with p-well on 4H-SiC for improving the electrical performance are proposed. Compared with the common JBS rectifier, the devices show an increasing breakdown voltage due to a uniform electric field. Forward and reverse characteristics have been verified at room and elevated temperatures. As a result, the breakdown voltage of 1.9 kV was obtained for the JBS rectifier with the P⁺ grids on the p-well (POP), and that of the JBS rectifier with the P⁺ grids in the p-well (PIP) is about 1.6 kV. The forward voltage drops of the POP and PIP JBS rectifiers at a current density of 100 A/cm² are 3 and 3.2 V, respectively. The POP and PIP JBS rectifiers have more than 3.3 ×10¹⁰ and 5.4 ×10¹⁰ on/off (1 V/ -500 V) current ratios, respectively. In addition, the output capacitance of the POP JBS rectifier at -3 V reduces about 15% relative to that of the common JBS rectifier. In addition, the figures of merit of the POP and PIP JBS rectifiers are about 4.1 times and 2.9 times that of the common JBS rectifier, respectively.