Title :
Solid state: Integrated circuits: The case for gallium arsenide: This superfast semiconductor holds great promise for high-speed computers, and manufacturing difficulties are now beginning to be overcome
Author :
Eden, R.C. ; Livingston, A.R. ; Welch, B.M.
Author_Institution :
Gigabit Logic Inc., Newbury Park, CA, USA
Abstract :
A discussion is presented of fabrication technologies for manufacturing GaAs devices. Advantages and drawbacks of heterojunction devices are outlined. Areas of concern in GaAs production lines are also examined. The discussion covers the depletion-mode metal-semiconductor field-effect transistor (D-MESFET), the enhancement-mode MESFET (E-MESFET), and the high-electron-mobility transistor (HEMT).
Keywords :
field effect transistors; gallium arsenide; D-MESFET; E-MESFET; GaAs production lines; HEMT; depletion-mode metal-semiconductor field-effect transistor; enhancement-mode MESFET; fabrication technologies; heterojunction devices; high-electron-mobility transistor; manufacturing GaAs devices; Gallium arsenide; HEMTs; Logic gates; MESFETs; Silicon; Threshold voltage;
Journal_Title :
Spectrum, IEEE
DOI :
10.1109/MSPEC.1983.6370057
