Broadband InGaAs PIN Traveling-Wave Switch Using a BCB-Based Thin-Film Microstrip Line Structure

Author

Yang, Jung Gil ; Yang, Kyounghoon

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea

Volume

19

Issue

10

fYear

2009

Firstpage

647

Lastpage

649

Abstract

This letter describes the design and fabrication of a broadband InGaAs PIN traveling wave switch. A new thin-film microstrip line structure integrated with InGaAs PIN diodes has been used to enhance the switch performance at higher frequencies. The developed InGaAs PIN switch has an insertion loss of less than 3.2 dB and an isolation of greater than 40 dB in a broadband frequency range from 25 to 95 GHz. The BCB-based multi-layer technology effectively reduces the chip size of the fabricated SPDT MMIC switch to 1.05 times 0.58 mm². To our knowledge, this is the first InGaAs PIN traveling-wave switch demonstrated up to 95 GHz.

Keywords

MMIC; gallium compounds; indium compounds; microwave switches; p-i-n diodes; InGaAs; PIN diodes; SPDT MMIC switch; benzocyclubutene; broadband PIN traveling-wave switc; frequency 25 GHz to 95 GHz; loss 3.2 dB; thin-film microstrip line structure; Benzocyclubutene (BCB); InGaAs; PIN diode; single-pole double-throw (SPDT); switch; traveling wave;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2009.2029745

Filename

5232825