An innovative mathematical model of RF-induced quiescent point shift in a BJT

Author

Fermi, Ugo ; Fiumara, Antonio ; Rossi, Giuseppe

Author_Institution

Fiat Res. Center, Orbassano, Italy

Volume

38

Issue

3

fYear

1996

fDate

8/1/1996 12:00:00 AM

Firstpage

244

Lastpage

249

Abstract

This paper describes the bipolar junction transistor (BJT) behavior under radio frequency (RF) injection in its base lead. Comparative results between a computer model and measured data over the range 5-1000 MHz are presented. In this work, various bias networks with different base bias resistors and various levels of injected power were taken into account. A new method to calculate the model electrical parameters is shown, without the direct knowledge of physical parameters such as doping profiles and geometrical dimensions of the junctions. For modeling purposes, a two-section hybrid π model was used in conjunction with a Fourier expansion of the rectification response. A good agreement was found between the measured data and model data

Keywords

UHF bipolar transistors; VHF devices; equivalent circuits; microwave bipolar transistors; radiofrequency interference; rectification; semiconductor device models; 5 MHz to 1 GHz; BJT; Fourier expansion; RF-induced quiescent point shift; base bias resistors; base lead; bias networks; bipolar junction transistor; electrical parameters; injected power; radio frequency injection; rectification response; two-section hybrid π model; Automotive electronics; Electronic equipment testing; Filtering; Intelligent networks; Mathematical model; Radio frequency; Resistors; Semiconductor process modeling; Solid modeling; Voltage;

fLanguage

English

Journal_Title

Electromagnetic Compatibility, IEEE Transactions on

Publisher

ieee

ISSN

0018-9375

Type

jour

DOI

10.1109/15.536053

Filename

536053