Title :
An innovative mathematical model of RF-induced quiescent point shift in a BJT
Author :
Fermi, Ugo ; Fiumara, Antonio ; Rossi, Giuseppe
Author_Institution :
Fiat Res. Center, Orbassano, Italy
fDate :
8/1/1996 12:00:00 AM
Abstract :
This paper describes the bipolar junction transistor (BJT) behavior under radio frequency (RF) injection in its base lead. Comparative results between a computer model and measured data over the range 5-1000 MHz are presented. In this work, various bias networks with different base bias resistors and various levels of injected power were taken into account. A new method to calculate the model electrical parameters is shown, without the direct knowledge of physical parameters such as doping profiles and geometrical dimensions of the junctions. For modeling purposes, a two-section hybrid π model was used in conjunction with a Fourier expansion of the rectification response. A good agreement was found between the measured data and model data
Keywords :
UHF bipolar transistors; VHF devices; equivalent circuits; microwave bipolar transistors; radiofrequency interference; rectification; semiconductor device models; 5 MHz to 1 GHz; BJT; Fourier expansion; RF-induced quiescent point shift; base bias resistors; base lead; bias networks; bipolar junction transistor; electrical parameters; injected power; radio frequency injection; rectification response; two-section hybrid π model; Automotive electronics; Electronic equipment testing; Filtering; Intelligent networks; Mathematical model; Radio frequency; Resistors; Semiconductor process modeling; Solid modeling; Voltage;
Journal_Title :
Electromagnetic Compatibility, IEEE Transactions on
