BJT-Mode Endurance on a 1T-RAM Bulk FinFET Device

Author

Aoulaiche, Marc ; Collaert, Nadine ; Degraeve, Robin ; Lu, Zhichao ; De Wachter, Bart ; Groeseneken, Guido ; Jurczak, Malgorzata ; Altimime, Laith

Author_Institution

IMEC, Leuven, Belgium

Volume

31

Issue

12

fYear

2010

Firstpage

1380

Lastpage

1382

Abstract

In this letter, endurance is investigated on one bulk FinFET transistor capacitorless random access memory, using the bipolar junction transistor (BJT) programming mode. For the first time, it is shown that endurance is an issue using the BJT-mode programming. The dominant degradation is due to the interface state generation by impact ionization used to write “1.” This degradation leads to the gate-induced drain leakage current increase, which results in shifts of the read state “0” current.

Keywords

MOSFET; bipolar transistors; impact ionisation; leakage currents; random-access storage; 1T-RAM bulk FinFET device; BJT programming mode; BJT-mode endurance; BJT-mode programming; bipolar junction transistor programming; bulk FinFET transistor capacitorless random access memory; gate-induced drain leakage current increase; impact ionization; interface state generation; Bipolar transistors; Current measurement; Degradation; FinFETs; Interface states; Junctions; Logic gates; Bipolar junction transistor (BJT); bulk FinFET; cycling; endurance; floating-body cell (FBC); one-transistor random access memory (1T-RAM); reliability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2079313

Filename

5613145