Title :
An Analytical Capacitance Model of Temperature-Sensitive, Large-Displacement Multimorph Cantilevers: Numerical and Experimental Validation
Author :
Scott, Sean ; Kim, Jeong-Il ; Sadeghi, Farshid ; Peroulis, Dimitrios
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
This paper presents a new experimentally validated analytical capacitance macromodel for microelectromechanical systems large-displacement cantilever beams. The presented model successfully captures 1) the deformed cantilever shape under large-displacement conditions and when the beam is subjected to simultaneous thermal and residual stresses; 2) the electric field and capacitance between the curled beam and an electrode underneath it from room temperature to over 200 °C. All analytical models are verified through finite-element analysis and, for the first time, experimentally validated for deflections over 120 μm and temperatures above 200 °C. We start by extending a multimorph model originally proposed to analyze piezoelectric actuators, to also consider thermal and residual (postfabrication) strains under large-displacement conditions. The model is experimentally validated through measurements conducted on SiO2/Ti/Au cantilevers fabricated on silicon wafers. The average error between the measured and simulated displacements is less than 4% and 3% at the beam midpoints and tips, respectively, for the entire range of 20-250 °C . Capacitance measurements conducted to over 200 °C show an average deviation from the macromodel of 6.4% over the range of 20-213 °C. The standard deviation for capacitance error is 5.4%, and the maximum error is 15.3%.
Keywords :
beams (structures); cantilevers; gold; micromechanical devices; piezoelectric actuators; silicon compounds; thermal stresses; titanium; Si; SiO2-Ti-Au; analytical capacitance macromodel; analytical capacitance model; deformed cantilever shape; electric field; finite-element analysis; large-displacement cantilever beams; microelectromechanical systems; multimorph model; piezoelectric actuators; residual stress; silicon wafers; temperature 20 degC to 250 degC; temperature-sensitive large-displacement multimorph cantilevers; thermal stress; Analytical models; Capacitance; Mathematical model; Residual stresses; Strain; Temperature sensors; Analytical; cantilever; capacitor; microelectromechanical systems (MEMS); model; multimorph;
Journal_Title :
Microelectromechanical Systems, Journal of
DOI :
10.1109/JMEMS.2011.2171323