• DocumentCode
    1363905
  • Title

    An Analytical Capacitance Model of Temperature-Sensitive, Large-Displacement Multimorph Cantilevers: Numerical and Experimental Validation

  • Author

    Scott, Sean ; Kim, Jeong-Il ; Sadeghi, Farshid ; Peroulis, Dimitrios

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • Volume
    21
  • Issue
    1
  • fYear
    2012
  • Firstpage
    161
  • Lastpage
    170
  • Abstract
    This paper presents a new experimentally validated analytical capacitance macromodel for microelectromechanical systems large-displacement cantilever beams. The presented model successfully captures 1) the deformed cantilever shape under large-displacement conditions and when the beam is subjected to simultaneous thermal and residual stresses; 2) the electric field and capacitance between the curled beam and an electrode underneath it from room temperature to over 200 °C. All analytical models are verified through finite-element analysis and, for the first time, experimentally validated for deflections over 120 μm and temperatures above 200 °C. We start by extending a multimorph model originally proposed to analyze piezoelectric actuators, to also consider thermal and residual (postfabrication) strains under large-displacement conditions. The model is experimentally validated through measurements conducted on SiO2/Ti/Au cantilevers fabricated on silicon wafers. The average error between the measured and simulated displacements is less than 4% and 3% at the beam midpoints and tips, respectively, for the entire range of 20-250 °C . Capacitance measurements conducted to over 200 °C show an average deviation from the macromodel of 6.4% over the range of 20-213 °C. The standard deviation for capacitance error is 5.4%, and the maximum error is 15.3%.
  • Keywords
    beams (structures); cantilevers; gold; micromechanical devices; piezoelectric actuators; silicon compounds; thermal stresses; titanium; Si; SiO2-Ti-Au; analytical capacitance macromodel; analytical capacitance model; deformed cantilever shape; electric field; finite-element analysis; large-displacement cantilever beams; microelectromechanical systems; multimorph model; piezoelectric actuators; residual stress; silicon wafers; temperature 20 degC to 250 degC; temperature-sensitive large-displacement multimorph cantilevers; thermal stress; Analytical models; Capacitance; Mathematical model; Residual stresses; Strain; Temperature sensors; Analytical; cantilever; capacitor; microelectromechanical systems (MEMS); model; multimorph;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2011.2171323
  • Filename
    6062635