Harmonic Distortion of Unstrained and Strained FinFETs Operating in Saturation

Author

Doria, Rodrigo Trevisoli ; Cerdeira, Antonio ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor ; Pavanello, Marcelo Antonio

Author_Institution

Univ. of Sao Paulo, Sao Paulo, Brazil

Volume

57

Issue

12

fYear

2010

Firstpage

3303

Lastpage

3311

Abstract

The harmonic distortion (HD) exhibited by unstrained and biaxially strained fin-shaped field-effect transistors operating in saturation as single-transistor amplifiers has been investigated for devices with different channel lengths L and fin widths W_fin. The study has been performed through device characterization, 3-D device simulations, and modeling. Nonlinearity has been evaluated in terms of second- and third-order HDs (HD2 and HD3, respectively), and a discussion on its physical sources has been carried out. Also, the influence of the open-loop voltage gain AV in HD has been observed.

Keywords

MOSFET; amplifiers; harmonic distortion; 3D device simulations; biaxially strained fin-shaped field-effect transistors; channel lengths; fin widths; open-loop voltage gain; second-order harmonic distortion; single-transistor amplifiers; strained FinFET; third-order harmonic distortion; unstrained FinFET; Degradation; FinFETs; Harmonic distortion; Scattering; Silicon on insulator technology; Biaxial strain; distortion; fin-shaped field-effect transistor (FinFET); silicon on insulator; single-transistor amplifier;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2079936

Filename

5613164