DocumentCode :
1364130
Title :
The hemt: A superfast transistor: An experimental GaAs-AlGoAs device switches in picoseconds and generates little heat. This is just what supercomputers need
Author :
Morkoc, H. ; Solomon, Paul M.
Author_Institution :
Dept. of Electrical Engng., Univ. of Illinois, Urbana, IL, USA
Volume :
21
Issue :
2
fYear :
1984
Firstpage :
28
Lastpage :
35
Abstract :
A description is given of an experimental GaAs-AlGaAs device that switches in picoseconds and generates little heat. Known as MODFET or HEMT, the device is compared to other less conventional devices, and an outline is presented of its operation.
Keywords :
aluminium compounds; field effect integrated circuits; field effect transistors; gallium arsenide; FEIC; FET; GaAs-AlGaAs device; HEMT; MODFET; field effect integrated circuits; high electron mobility transistor; modulation doped field effect transistors; superfast transistor; Educational institutions; Gallium arsenide; HEMTs; Logic gates; MESFETs; MODFETs; Silicon;
fLanguage :
English
Journal_Title :
Spectrum, IEEE
Publisher :
ieee
ISSN :
0018-9235
Type :
jour
DOI :
10.1109/MSPEC.1984.6370174
Filename :
6370174
Link To Document :
بازگشت