• DocumentCode
    1364130
  • Title

    The hemt: A superfast transistor: An experimental GaAs-AlGoAs device switches in picoseconds and generates little heat. This is just what supercomputers need

  • Author

    Morkoc, H. ; Solomon, Paul M.

  • Author_Institution
    Dept. of Electrical Engng., Univ. of Illinois, Urbana, IL, USA
  • Volume
    21
  • Issue
    2
  • fYear
    1984
  • Firstpage
    28
  • Lastpage
    35
  • Abstract
    A description is given of an experimental GaAs-AlGaAs device that switches in picoseconds and generates little heat. Known as MODFET or HEMT, the device is compared to other less conventional devices, and an outline is presented of its operation.
  • Keywords
    aluminium compounds; field effect integrated circuits; field effect transistors; gallium arsenide; FEIC; FET; GaAs-AlGaAs device; HEMT; MODFET; field effect integrated circuits; high electron mobility transistor; modulation doped field effect transistors; superfast transistor; Educational institutions; Gallium arsenide; HEMTs; Logic gates; MESFETs; MODFETs; Silicon;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/MSPEC.1984.6370174
  • Filename
    6370174
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1364130