Title :
The hemt: A superfast transistor: An experimental GaAs-AlGoAs device switches in picoseconds and generates little heat. This is just what supercomputers need
Author :
Morkoc, H. ; Solomon, Paul M.
Author_Institution :
Dept. of Electrical Engng., Univ. of Illinois, Urbana, IL, USA
Abstract :
A description is given of an experimental GaAs-AlGaAs device that switches in picoseconds and generates little heat. Known as MODFET or HEMT, the device is compared to other less conventional devices, and an outline is presented of its operation.
Keywords :
aluminium compounds; field effect integrated circuits; field effect transistors; gallium arsenide; FEIC; FET; GaAs-AlGaAs device; HEMT; MODFET; field effect integrated circuits; high electron mobility transistor; modulation doped field effect transistors; superfast transistor; Educational institutions; Gallium arsenide; HEMTs; Logic gates; MESFETs; MODFETs; Silicon;
Journal_Title :
Spectrum, IEEE
DOI :
10.1109/MSPEC.1984.6370174
