Research on HVIGBT transient mixture model and parameter extraction method

This paper presents a kind of HVIGBT transient mixture model and corresponding parameter extraction method. The HVIGBT model can divide into MOSFET and BJT two parts. The two models are formed respectively according to HVIGBT work principle, in addition, the carrier transport equations have been simplified for avoiding Kirk effect in BJT model. The transient model is realized in PSIM software in the paper. Extraction methods, which include estimation by empirical values, calculation by testing waveforms and comparison with same type models, are adopted in extracting model parameters. Through comparing testing and simulation waveforms, the model´s simulation accuracy is proved.