A nonlinear microwave MOSFET model for SPICE simulators

Author

Biber, Charlotte E. ; Schmatz, Martin L. ; Morf, Thomas ; Lott, Urs ; Bächtold, Werner

Author_Institution

Lab. for Electromagnetic Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland

Volume

46

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

604

Lastpage

610

Abstract

As the gate lengths of silicon MOSFET´s become smaller and smaller, these devices are usable to frequencies in the gigahertz range. The nonlinear MOSFET model presented in this paper is based on S-parameter measurements over a large bias range, and has been implemented in a SPICE simulator. The improvements consist of new equations for the nonlinear capacitances and output conductance of the MOS transistor. This new large-signal model shows very good agreement between measured and simulated S-parameters of single transistors at various bias points up to 10 GHz. Intermodulation (IM) and circuit performance are also well predicted. Simulated S-parameters of a simple amplifier showed excellent agreement with measured results, confirming the performance of this model

Keywords

MOSFET; S-parameters; SPICE; capacitance; elemental semiconductors; equivalent circuits; intermodulation; microwave field effect transistors; semiconductor device models; silicon; 10 GHz; IM performance; S-parameter measurements; SPICE simulators; Si; bias range; circuit performance; intermodulation performance; large-signal model; nonlinear capacitances; nonlinear microwave MOSFET model; output conductance; Capacitance; Circuit optimization; Circuit simulation; Frequency; MOSFET circuits; Microwave devices; Nonlinear equations; SPICE; Scattering parameters; Silicon;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.668670

Filename

668670