Title :
Microwave PtSi-Si Schottky-barrier-detector diode fabrication using an implanted active layer on high-resistivity silicon substrate
Author :
Wu, Yunghong ; Armstrong, B. Mervyn ; Gamble, Harold S. ; Hu, Zhirun ; Chen, Qiang ; Yang, Suidong ; Fusco, Vincent F. ; Stewart, J. A Carson
Author_Institution :
Dept. of Electr. & Electron. Eng., Queen´´s Univ., Belfast, UK
fDate :
5/1/1998 12:00:00 AM
Abstract :
A surface-oriented planar Schottky diode for use as a detector diode on Si monolithic microwave integrated circuits (MMIC´s) was developed. The active n-on-n+ and contact n+ regions were doped on the high-resistivity silicon substrate using phosphorus ion implantation. The PtSi-Si barrier was formed by metallurgical interaction between pure platinum film and silicon. The process technology developed for the Schottky-detector diode fabrication is precise, simple, and cheap, and is suitable for mass production. The typical measured cutoff frequency of a zero-biased fabricated Schottky diode is 118 GHz
Keywords :
MMIC mixers; Schottky diode mixers; Schottky diodes; elemental semiconductors; integrated circuit technology; ion implantation; microwave diodes; platinum compounds; silicon; 118 GHz; P ion implantation; PtSi-Si; PtSi-Si Schottky-barrier-detector diode; Si; Si MMIC; active n-on-n+ region; contact n+ region; high-resistivity Si substrate; implanted active layer; microwave detector diode fabrication; monolithic microwave integrated circuits; process technology; surface-oriented planar Schottky diode; Detectors; Fabrication; Ion implantation; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Platinum; Schottky diodes; Silicon; Substrates;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
