RFIC´s for mobile communication systems using SiGe bipolar technology

Author

Götzfried, Rainer ; Beißwanger, Frank ; Gerlach, Stephan ; Schüppen, Andreas ; Dietrich, Harry ; Seiler, Ulrich ; Bach, Karl-Heinz ; Albers, Jens

Author_Institution

TEMIC Semicond. GmbH, Heilbronn, Germany

Volume

46

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

661

Lastpage

668

Abstract

We report on design aspects and the implementation of RF integrated circuits (RFIC´s) using TEMIC´s SiGe heterojunction bipolar transistor (HBT) technology. SiGe HBT´s with 50-GHz f_T and f _max were obtained by a production process including polysilicon resistors, nitride capacitors, and spiral inductors showing Q values up to 10. RF noise figures down to 1 dB at 2 GHz with an associated gain of 14-dB and 1-kHz 1/f corner frequency were obtained. The differences between the device parameters of Si bipolar junction transistor (BJT) and SiGe HBT technology and their influence on IC design are discussed. Design and measurement results of RFIC´s, including a low-noise amplifier (LNA) and a power amplifier (PA) for application in a 1.9-GHz digital enhanced cordless telecommunications (DECT) RF front-end and 900-MHz preamplifier for a global system for mobile communication (GSM) power module are presented

Keywords

Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; bipolar analogue integrated circuits; cellular radio; cordless telephone systems; integrated circuit design; integrated circuit noise; semiconductor materials; 1 dB; 1 kHz; 1/f corner frequency; 14 dB; 50 GHz; 900 MHz to 2 GHz; DECT RF front-end; GSM; IC design; Q values; RF noise figures; RFICs; SiGe; TEMIC; UHF ICs; UHF amplifiers; bipolar technology; low-noise amplifier; mobile communication systems; nitride capacitors; polysilicon resistors; power amplifier; spiral inductors; Bipolar integrated circuits; GSM; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Low-noise amplifiers; Mobile communication; Radio frequency; Radiofrequency integrated circuits; Silicon germanium;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.668679

Filename

668679