Title :
RFIC´s for mobile communication systems using SiGe bipolar technology
Author :
Götzfried, Rainer ; Beißwanger, Frank ; Gerlach, Stephan ; Schüppen, Andreas ; Dietrich, Harry ; Seiler, Ulrich ; Bach, Karl-Heinz ; Albers, Jens
Author_Institution :
TEMIC Semicond. GmbH, Heilbronn, Germany
fDate :
5/1/1998 12:00:00 AM
Abstract :
We report on design aspects and the implementation of RF integrated circuits (RFIC´s) using TEMIC´s SiGe heterojunction bipolar transistor (HBT) technology. SiGe HBT´s with 50-GHz fT and f max were obtained by a production process including polysilicon resistors, nitride capacitors, and spiral inductors showing Q values up to 10. RF noise figures down to 1 dB at 2 GHz with an associated gain of 14-dB and 1-kHz 1/f corner frequency were obtained. The differences between the device parameters of Si bipolar junction transistor (BJT) and SiGe HBT technology and their influence on IC design are discussed. Design and measurement results of RFIC´s, including a low-noise amplifier (LNA) and a power amplifier (PA) for application in a 1.9-GHz digital enhanced cordless telecommunications (DECT) RF front-end and 900-MHz preamplifier for a global system for mobile communication (GSM) power module are presented
Keywords :
Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; bipolar analogue integrated circuits; cellular radio; cordless telephone systems; integrated circuit design; integrated circuit noise; semiconductor materials; 1 dB; 1 kHz; 1/f corner frequency; 14 dB; 50 GHz; 900 MHz to 2 GHz; DECT RF front-end; GSM; IC design; Q values; RF noise figures; RFICs; SiGe; TEMIC; UHF ICs; UHF amplifiers; bipolar technology; low-noise amplifier; mobile communication systems; nitride capacitors; polysilicon resistors; power amplifier; spiral inductors; Bipolar integrated circuits; GSM; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Low-noise amplifiers; Mobile communication; Radio frequency; Radiofrequency integrated circuits; Silicon germanium;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
