Three-dimensional silicon MMIC´s operating up to K-band

Author

Nishikawa, Kenjiro ; Toyoda, Ichihiko ; Kamogawa, Kenji ; Tokumitsu, Tsuneo

Author_Institution

NTT Wireless Syst. Labs., Kanagawa, Japan

Volume

46

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

677

Lastpage

684

Abstract

This paper presents three-dimensional (3-D) Si monolithic microwave integrated circuit (MMIC) technology and Si MMIC operation up to K-band using this technology, and describes X- and K-band mixers with design details and measurements. The 3-D Si MMIC technology isolates passive circuits from the low-resistivity Si substrate. The evaluations use Si bipolar transistors with an emitter size of 0.3 μm×13.4 μm×9 and f_max of 30 GHz. The mixers are base and collector LO injection types. The mixers, fabricated in an area of 0.76 mm×0.54 mm for the X-band mixers and in 0.46 mm×0.42 mm for the K-band mixers, exhibit a frequency conversion loss of 5-12 dB from 3.5 to 10 GHz and from 10 to 25 GHz. This technology is extremely effective for single-chip integration of receivers and transmitters and also for mixed-mode MMIC´s up to K-band frequencies

Keywords

MMIC frequency convertors; MMIC mixers; cellular arrays; elemental semiconductors; mixed analogue-digital integrated circuits; silicon; 10 to 25 GHz; 3.5 to 10 GHz; 5 to 12 dB; K-band; LO injection types; Si; emitter size; frequency conversion loss; mixed-mode MMICs; mixers; passive circuits; single-chip integration; three-dimensional MMICs; Integrated circuit technology; Isolation technology; K-band; MMICs; Microwave integrated circuits; Microwave measurements; Microwave technology; Mixers; Monolithic integrated circuits; Silicon;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.668682

Filename

668682