Design and realization of a millimeter-wave Si/SiGe HBT frequency multiplier

Author

Bruce, Staffan P O ; Rydberg, Anders ; Kim, Moonil ; Beisswanger, F.J. ; Luy, J.F. ; Schumacher, Hermann ; Erben, Uwe ; Willander, Magnus ; Karlsteen, Magnus

Author_Institution

Signals & Syst. Group, Uppsala Univ., Sweden

Volume

46

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

695

Lastpage

700

Abstract

In this paper, the design of an active millimeter-wave frequency doubler using an Si/SiGe heterojunction bipolar transistor (HBT) as the active device is studied. Simulations are made using a developed physics-based large-signal model for Si/SiGe HBT´s, which includes thermal dependence. Despite the high-output operating frequency of the fabricated doubler being close to f_max 67 GHz for the Si/SiGe HBT, the conversion efficiency in a not completely optimized circuit is found to be better than -12 dB. The 3-dB bandwidth for the doubler is approximately 7.4%. These results are found to be comparable to a heterojunction field-effect transistor (HFET) doubler operating equally close to its f_max. Simulated results of the doubler performance with varied terminating impedances for the HBT are presented as design aids

Keywords

Ge-Si alloys; bipolar MIMIC; elemental semiconductors; equivalent circuits; frequency multipliers; heterojunction bipolar transistors; millimetre wave frequency convertors; semiconductor device models; semiconductor materials; silicon; 67 GHz; EHF; MIMIC; MM-wave frequency multiplier; Si-SiGe; Si/SiGe HBT frequency multiplier; heterojunction bipolar transistor; physics-based large-signal model; thermal dependence; Bandwidth; Circuits; FETs; Frequency conversion; Germanium silicon alloys; HEMTs; Heterojunction bipolar transistors; MODFETs; Millimeter wave transistors; Silicon germanium;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.668684

Filename

668684