DocumentCode :
1364448
Title :
Coplanar passive elements on Si substrate for frequencies up to 110 GHz
Author :
Heinrich, W. ; Gerdes, J. ; Schmückle, F.J. ; Rheinfelder, C. ; Strohm, K.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Volume :
46
Issue :
5
fYear :
1998
fDate :
5/1/1998 12:00:00 AM
Firstpage :
709
Lastpage :
712
Abstract :
This paper provides both modeling and design information on coplanar passive elements on a silicon substrate. The influence of substrate resistivity on coplanar waveguide (CPW) loss is discussed, and elements of a cell library for coplanar monolithic microwave integrated circuits (MMIC´s) on high-resistivity substrates are presented. The elements include discontinuities, junctions, and spiral inductors. The models are based on field-theoretical simulations and verified by S-parameter measurements up to 110 GHz
Keywords :
MIMIC; MMIC; S-parameters; coplanar waveguides; equivalent circuits; inductors; losses; silicon; substrates; 110 GHz; CPW loss; S-parameter measurements; Si; Si substrate; cell library; coplanar passive elements; coplanar waveguide loss; discontinuities; junctions; modeling; monolithic microwave integrated circuits; spiral inductors; substrate resistivity; Conductivity; Coplanar waveguides; Frequency; Inductors; Libraries; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Silicon; Spirals;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.668686
Filename :
668686
Link To Document :
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