DocumentCode
1364945
Title
GaAs MSM photodetectors with recessed anode and/or cathode
Author
Yuang, Rong-Heng ; Chyi, Jen-Inn
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Volume
34
Issue
5
fYear
1998
fDate
5/1/1998 12:00:00 AM
Firstpage
811
Lastpage
816
Abstract
The GaAs metal-semiconductor-metal photodetectors (MSM-PDs) with recessed electrodes have been systematically characterized. The recessed cathode results in effective collection of the speed-limiting holes due to both a strengthened electric field and a shortened transit path around the absorption region while the recessed anode gives no significant change on the electric field distribution, as evidenced by the two dimensional simulation. The experimental results show that the MSM-PDs having the recessed-cathode structure, compared with the conventional one, exhibit a substantial improvement on the speed, peak amplitude, and capacitance, especially at low-bias operation. The fall time of the temporal response approaches its saturation value of about 10 ps at a bias voltage as low as 3 V on the 50 μm×50 μm detector with a finger width and spacing of 2 μm
Keywords
anodes; cathodes; electrodes; gallium arsenide; metal-semiconductor-metal structures; photodetectors; photodiodes; 10 ps; 3 V; 50 mum; GaAs; GaAs MSM photodetectors; MSM-PDs; absorption region; capacitance; effective collection; electric field; electric field distribution; fall time; finger width; low-bias operation; peak amplitude; photodiodes; recessed anode; recessed cathode; recessed electrodes; saturation value; shortened transit path; speed-limiting holes; temporal response; Absorption; Anodes; Capacitance; Cathodes; Detectors; Electrodes; Fingers; Gallium arsenide; Low voltage; Photodetectors;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.668768
Filename
668768
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