DocumentCode :
1364945
Title :
GaAs MSM photodetectors with recessed anode and/or cathode
Author :
Yuang, Rong-Heng ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Volume :
34
Issue :
5
fYear :
1998
fDate :
5/1/1998 12:00:00 AM
Firstpage :
811
Lastpage :
816
Abstract :
The GaAs metal-semiconductor-metal photodetectors (MSM-PDs) with recessed electrodes have been systematically characterized. The recessed cathode results in effective collection of the speed-limiting holes due to both a strengthened electric field and a shortened transit path around the absorption region while the recessed anode gives no significant change on the electric field distribution, as evidenced by the two dimensional simulation. The experimental results show that the MSM-PDs having the recessed-cathode structure, compared with the conventional one, exhibit a substantial improvement on the speed, peak amplitude, and capacitance, especially at low-bias operation. The fall time of the temporal response approaches its saturation value of about 10 ps at a bias voltage as low as 3 V on the 50 μm×50 μm detector with a finger width and spacing of 2 μm
Keywords :
anodes; cathodes; electrodes; gallium arsenide; metal-semiconductor-metal structures; photodetectors; photodiodes; 10 ps; 3 V; 50 mum; GaAs; GaAs MSM photodetectors; MSM-PDs; absorption region; capacitance; effective collection; electric field; electric field distribution; fall time; finger width; low-bias operation; peak amplitude; photodiodes; recessed anode; recessed cathode; recessed electrodes; saturation value; shortened transit path; speed-limiting holes; temporal response; Absorption; Anodes; Capacitance; Cathodes; Detectors; Electrodes; Fingers; Gallium arsenide; Low voltage; Photodetectors;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.668768
Filename :
668768
Link To Document :
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