DocumentCode
1364958
Title
The influence of tensile strain on differential gain and Auger recombination in 1.5-μm multiple-quantum-well lasers
Author
Jones, G. ; Smith, A.D. ; O´Reilly, E.P. ; Silver, Mark ; Briggs, Alan T R ; Fice, M.J. ; Adams, Alf R. ; Greene, P. David ; Scarrott, K. ; Vranic, A.
Author_Institution
Dept. of Phys., Surrey Univ., Guildford, UK
Volume
34
Issue
5
fYear
1998
fDate
5/1/1998 12:00:00 AM
Firstpage
822
Lastpage
833
Abstract
A systematic study has been undertaken including growth, characterization, and modeling of tensile-strained multiple-quantum-well (MQW) lasers with emission wavelengths in the neighborhood of 1.5 μm. The laser threshold increases between 0% and -0.5% mismatch, switching from TE to TM polarized emission at -0.5%, then decreases to -1.3 % mismatch, with TM polarized emission. The threshold current density has a much weaker dependence on inverse cavity length in the highly tensile-strained lasers than has previously been observed for lattice-matched and compressive lasers emitting in the same wavelength range. We present theoretical calculations which show that the observed differences are well explained, both qualitatively and quantitatively, by the calculated variation with strain of the optical confinement factor Γ and the differential gain at transparency, dg/dn (ntr). More detailed comparison with experiment suggests that Auger recombination provides the dominant contribution to the threshold current density. Estimated Auger coefficients C are in good agreement with those previously obtained using other techniques
Keywords
Auger effect; current density; electron-hole recombination; infrared sources; laser modes; laser theory; laser transitions; quantum well lasers; semiconductor device models; 1.5 mum; Auger recombination; TE polarized emission; TM polarized emission; differential gain; emission wavelengths; inverse cavity length; laser threshold; multiple-quantum-well lasers; optical confinement factor; semiconductor growth; tensile strain; tensile-strained MQW lasers; threshold current density; transparency; Laser modes; Laser theory; Physics; Quantum well devices; Quantum well lasers; Radiative recombination; Semiconductor lasers; Silver; Tensile strain; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.668770
Filename
668770
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