• DocumentCode
    1364958
  • Title

    The influence of tensile strain on differential gain and Auger recombination in 1.5-μm multiple-quantum-well lasers

  • Author

    Jones, G. ; Smith, A.D. ; O´Reilly, E.P. ; Silver, Mark ; Briggs, Alan T R ; Fice, M.J. ; Adams, Alf R. ; Greene, P. David ; Scarrott, K. ; Vranic, A.

  • Author_Institution
    Dept. of Phys., Surrey Univ., Guildford, UK
  • Volume
    34
  • Issue
    5
  • fYear
    1998
  • fDate
    5/1/1998 12:00:00 AM
  • Firstpage
    822
  • Lastpage
    833
  • Abstract
    A systematic study has been undertaken including growth, characterization, and modeling of tensile-strained multiple-quantum-well (MQW) lasers with emission wavelengths in the neighborhood of 1.5 μm. The laser threshold increases between 0% and -0.5% mismatch, switching from TE to TM polarized emission at -0.5%, then decreases to -1.3 % mismatch, with TM polarized emission. The threshold current density has a much weaker dependence on inverse cavity length in the highly tensile-strained lasers than has previously been observed for lattice-matched and compressive lasers emitting in the same wavelength range. We present theoretical calculations which show that the observed differences are well explained, both qualitatively and quantitatively, by the calculated variation with strain of the optical confinement factor Γ and the differential gain at transparency, dg/dn (ntr). More detailed comparison with experiment suggests that Auger recombination provides the dominant contribution to the threshold current density. Estimated Auger coefficients C are in good agreement with those previously obtained using other techniques
  • Keywords
    Auger effect; current density; electron-hole recombination; infrared sources; laser modes; laser theory; laser transitions; quantum well lasers; semiconductor device models; 1.5 mum; Auger recombination; TE polarized emission; TM polarized emission; differential gain; emission wavelengths; inverse cavity length; laser threshold; multiple-quantum-well lasers; optical confinement factor; semiconductor growth; tensile strain; tensile-strained MQW lasers; threshold current density; transparency; Laser modes; Laser theory; Physics; Quantum well devices; Quantum well lasers; Radiative recombination; Semiconductor lasers; Silver; Tensile strain; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.668770
  • Filename
    668770