Title :
Degradation of II-VI blue-green semiconductor lasers
Author :
Chuang, Shun-Lien ; Nakayama, Norikazu ; Ishibashi, Akira ; Taniguchi, Satoshi ; Nakano, Kazushi
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
5/1/1998 12:00:00 AM
Abstract :
Theory and experiment of the degradation of II-VI blue-green laser diodes using quantum-well (QW) structures are presented. We develop the fundamental equations for the operation current of laser diodes as a function of aging time under the constant optical power aging condition. We show experimental results for the increase of the operation current as a function of aging time and its dependence on the ambient temperature. We find that the increase of the threshold current and the operation current under constant optical output power aging condition is caused by the increase of the nonradiative recombination current due to the increase of the defect density. The generation of the defect density follows a kinetic mechanism caused by an electron-hole recombination enhancement. Thermal effects also accelerate the degradation of the laser diodes. Our theory agrees very well with the experiment
Keywords :
II-VI semiconductors; ageing; electron-hole recombination; laser theory; optical testing; quantum well lasers; semiconductor device models; semiconductor device testing; II-VI blue-green semiconductor laser degradation; QW laser; aging time; ambient temperature; constant optical output power aging condition; constant optical power aging condition; defect density; electron-hole recombination enhancement; fundamental equations; kinetic mechanism; nonradiative recombination current; operation current; quantum-well structure; thermal effects; Aging; Degradation; Diode lasers; Equations; Laser theory; Quantum well lasers; Radiative recombination; Semiconductor lasers; Spontaneous emission; Temperature dependence;
Journal_Title :
Quantum Electronics, IEEE Journal of
