Degradation of II-VI blue-green semiconductor lasers

Author

Chuang, Shun-Lien ; Nakayama, Norikazu ; Ishibashi, Akira ; Taniguchi, Satoshi ; Nakano, Kazushi

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

34

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

851

Lastpage

857

Abstract

Theory and experiment of the degradation of II-VI blue-green laser diodes using quantum-well (QW) structures are presented. We develop the fundamental equations for the operation current of laser diodes as a function of aging time under the constant optical power aging condition. We show experimental results for the increase of the operation current as a function of aging time and its dependence on the ambient temperature. We find that the increase of the threshold current and the operation current under constant optical output power aging condition is caused by the increase of the nonradiative recombination current due to the increase of the defect density. The generation of the defect density follows a kinetic mechanism caused by an electron-hole recombination enhancement. Thermal effects also accelerate the degradation of the laser diodes. Our theory agrees very well with the experiment

Keywords

II-VI semiconductors; ageing; electron-hole recombination; laser theory; optical testing; quantum well lasers; semiconductor device models; semiconductor device testing; II-VI blue-green semiconductor laser degradation; QW laser; aging time; ambient temperature; constant optical output power aging condition; constant optical power aging condition; defect density; electron-hole recombination enhancement; fundamental equations; kinetic mechanism; nonradiative recombination current; operation current; quantum-well structure; thermal effects; Aging; Degradation; Diode lasers; Equations; Laser theory; Quantum well lasers; Radiative recombination; Semiconductor lasers; Spontaneous emission; Temperature dependence;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.668773

Filename

668773