DocumentCode :
136504
Title :
Temperature effects on the transient measurement of the junction-to-case thermal resistance of IGBTs
Author :
Zhijie Qiu ; Jin Zhang ; Jinlei Meng ; Xuhui Wen
Author_Institution :
Key Lab. of Power Electron. & Electr. Drives, Beijing, China
fYear :
2014
fDate :
Aug. 31 2014-Sept. 3 2014
Firstpage :
1
Lastpage :
4
Abstract :
The temperature effects on thermal resistance measurement of power modules when applying the transient dual interface measurement method proposed in JESD51-14 is studied in this paper. Simulation and experiment results indicate that the junction temperature should be consistent of two transient cooling curves with and without thermal grease, otherwise the two thermal impedance curves will separate prematurely that result in a lower valuation even an incorrect one of junction-to-case thermal resistance, which is especially obvious for Insulated Gate Bipolar Transistor (IGBT).
Keywords :
cooling; insulated gate bipolar transistors; modules; power semiconductor devices; transients; IGBT; JESD51-14; insulated gate bipolar transistor; junction temperature; junction-to-case thermal resistance; power modules; temperature effect; thermal resistance measurement; transient cooling curve; transient dual interface measurement method; transient measurement; Cooling; Electrical resistance measurement; Semiconductor device measurement; Temperature measurement; Thermal conductivity; Thermal resistance; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-4240-4
Type :
conf
DOI :
10.1109/ITEC-AP.2014.6940775
Filename :
6940775
Link To Document :
بازگشت