DocumentCode
136504
Title
Temperature effects on the transient measurement of the junction-to-case thermal resistance of IGBTs
Author
Zhijie Qiu ; Jin Zhang ; Jinlei Meng ; Xuhui Wen
Author_Institution
Key Lab. of Power Electron. & Electr. Drives, Beijing, China
fYear
2014
fDate
Aug. 31 2014-Sept. 3 2014
Firstpage
1
Lastpage
4
Abstract
The temperature effects on thermal resistance measurement of power modules when applying the transient dual interface measurement method proposed in JESD51-14 is studied in this paper. Simulation and experiment results indicate that the junction temperature should be consistent of two transient cooling curves with and without thermal grease, otherwise the two thermal impedance curves will separate prematurely that result in a lower valuation even an incorrect one of junction-to-case thermal resistance, which is especially obvious for Insulated Gate Bipolar Transistor (IGBT).
Keywords
cooling; insulated gate bipolar transistors; modules; power semiconductor devices; transients; IGBT; JESD51-14; insulated gate bipolar transistor; junction temperature; junction-to-case thermal resistance; power modules; temperature effect; thermal resistance measurement; transient cooling curve; transient dual interface measurement method; transient measurement; Cooling; Electrical resistance measurement; Semiconductor device measurement; Temperature measurement; Thermal conductivity; Thermal resistance; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
Conference_Location
Beijing
Print_ISBN
978-1-4799-4240-4
Type
conf
DOI
10.1109/ITEC-AP.2014.6940775
Filename
6940775
Link To Document