• DocumentCode
    136504
  • Title

    Temperature effects on the transient measurement of the junction-to-case thermal resistance of IGBTs

  • Author

    Zhijie Qiu ; Jin Zhang ; Jinlei Meng ; Xuhui Wen

  • Author_Institution
    Key Lab. of Power Electron. & Electr. Drives, Beijing, China
  • fYear
    2014
  • fDate
    Aug. 31 2014-Sept. 3 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The temperature effects on thermal resistance measurement of power modules when applying the transient dual interface measurement method proposed in JESD51-14 is studied in this paper. Simulation and experiment results indicate that the junction temperature should be consistent of two transient cooling curves with and without thermal grease, otherwise the two thermal impedance curves will separate prematurely that result in a lower valuation even an incorrect one of junction-to-case thermal resistance, which is especially obvious for Insulated Gate Bipolar Transistor (IGBT).
  • Keywords
    cooling; insulated gate bipolar transistors; modules; power semiconductor devices; transients; IGBT; JESD51-14; insulated gate bipolar transistor; junction temperature; junction-to-case thermal resistance; power modules; temperature effect; thermal resistance measurement; transient cooling curve; transient dual interface measurement method; transient measurement; Cooling; Electrical resistance measurement; Semiconductor device measurement; Temperature measurement; Thermal conductivity; Thermal resistance; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4799-4240-4
  • Type

    conf

  • DOI
    10.1109/ITEC-AP.2014.6940775
  • Filename
    6940775