• DocumentCode
    1365202
  • Title

    In Situ Comparison of Si/High- \\kappa and \\hbox {Si}/ \\hbox</h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Pham-Nguyen, Loan ; Fenouillet-Beranger, Claire ; Vandooren, Anne ; Skotnicki, Thomas ; Ghibaudo, Gerard ; Cristoloveanu, Sorin</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Lab. d´´Hyperfreq. et Caracterisation, Inst. de Microelectron., Electromagn. et Photonique, Grenoble, France</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>30</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>10</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2009</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1075</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1077</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Detailed measurements of front- and back-channel characteristics in advanced SOI MOSFETs (ultrathin Si film, high-kappa, metal gate, and selective epitaxy of source/drain) are used to reveal and compare the transport properties at the corresponding Si/high- kappa (HfO<sub>2</sub> or HfSiON) and Si/SiO<sub>2</sub> interfaces. Low-temperature operation magnifies the difference between these two interfaces in terms of carrier mobility, threshold voltage, and subthreshold swing. As compared with Si/SiO<sub>2</sub>, the low-field mobility is lower at the Si/high-kappa interface and increases less rapidly at low temperature, reflecting additional scattering mechanisms governed by high-kappa and neutral defects.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>MOSFET; carrier mobility; hafnium compounds; high-k dielectric thin films; oxygen compounds; silicon compounds; silicon-on-insulator; HfSiON; SOI MOSFET; Si-SiO<sub>2</sub>; carrier mobility; high-kappa thin film; low-field mobility; metal gate; neutral defects; source-drain; subthreshold swing; threshold voltage; ultrathin film; FD SOI MOSFETs; high-<formula formulatype=$kappa$ ; neutral defects; remote Coulomb scattering (RCS);

  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2027141
  • Filename
    5233798
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1365202