مرکز منطقه ای اطلاع رساني علوم و فناوري - <emphasis emphasistype="italic">In Situ</emphasis> Comparison of Si/High- <formula formulatype="inline"> <img src="/images/tex/243.gif" alt="\\kappa "> </formula> and <formula formulatype="inline"> <img src="/images/tex/19133.gif" alt="\\hbox {Si}/ \\hbox

Title :

In Situ Comparison of Si/High- $\\kappa$ and $\\hbox {Si}/ \\hbox</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Pham-Nguyen, Loan ; Fenouillet-Beranger, Claire ; Vandooren, Anne ; Skotnicki, Thomas ; Ghibaudo, Gerard ; Cristoloveanu, Sorin</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Lab. d´´Hyperfreq. et Caracterisation, Inst. de Microelectron., Electromagn. et Photonique, Grenoble, France</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>30</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>10</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2009</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1075</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1077</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Detailed measurements of front- and back-channel characteristics in advanced SOI MOSFETs (ultrathin Si film, high-kappa, metal gate, and selective epitaxy of source/drain) are used to reveal and compare the transport properties at the corresponding Si/high- kappa (HfO<sub>2</sub> or HfSiON) and Si/SiO<sub>2</sub> interfaces. Low-temperature operation magnifies the difference between these two interfaces in terms of carrier mobility, threshold voltage, and subthreshold swing. As compared with Si/SiO<sub>2</sub>, the low-field mobility is lower at the Si/high-kappa interface and increases less rapidly at low temperature, reflecting additional scattering mechanisms governed by high-kappa and neutral defects.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>MOSFET; carrier mobility; hafnium compounds; high-k dielectric thin films; oxygen compounds; silicon compounds; silicon-on-insulator; HfSiON; SOI MOSFET; Si-SiO<sub>2</sub>; carrier mobility; high-kappa thin film; low-field mobility; metal gate; neutral defects; source-drain; subthreshold swing; threshold voltage; ultrathin film; FD SOI MOSFETs; high-<formula formulatype=$ $kappa$ ; neutral defects; remote Coulomb scattering (RCS);