Highly Stable Radiation-Hardened Resistive-Switching Memory

Author

Wang, Yan ; Lv, Hangbing ; Wang, Wei ; Liu, Qi ; Long, Shibing ; Wang, Qin ; Huo, Zongliang ; Zhang, Sen ; Li, Yingtao ; Zuo, Qingyun ; Lian, Wentai ; Yang, Jianhong ; Liu, Ming

Author_Institution

Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Chinese Acad. of Sci., Beijing, China

Volume

31

Issue

12

fYear

2010

Firstpage

1470

Lastpage

1472

Abstract

In this letter, the resistive random access memory (RRAM) with metal-insulator-metal structure is investigated for the first time under radiation conditions. The fabricated Cu-doped HfO₂-based RRAM devices are found to have immunity from ⁶⁰Co γ ray of various dose ranges. The basic RRAM parameters such as high-resistance state, low-resistance state, SET/RESET voltages, operation speed, and endurance have nearly no degradation after ⁶⁰Co γ ray treatment with a total dose as high as 3.6 × 10⁵ rad (Si). Furthermore, a retention characteristic of 10⁵ s is also achieved during radiation. The highly stable characteristics of Cu-doped HfO₂ -based RRAM devices under radiation provide RRAM a great potential for aerospace and nuclear applications.

Keywords

MIM structures; electric resistance; radiation hardening (electronics); random-access storage; HfO₂:Cu; RRAM device; RRAM parameter; aerospace application; high-resistance state; highly stable radiation-hardened resistive-switching memory; low-resistance state; metal-insulator-metal structure; nuclear application; radiation condition; resistive random access memory; retention characteristic; Copper; Ions; Nonvolatile memory; Radiation; Radiation effects; Random access memory; Silicon; $gamma$ ray; Conductive filament; radiation; resistive random access memory (RRAM);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2081340

Filename

5613911