Title :
Highly Stable Radiation-Hardened Resistive-Switching Memory
Author :
Wang, Yan ; Lv, Hangbing ; Wang, Wei ; Liu, Qi ; Long, Shibing ; Wang, Qin ; Huo, Zongliang ; Zhang, Sen ; Li, Yingtao ; Zuo, Qingyun ; Lian, Wentai ; Yang, Jianhong ; Liu, Ming
Author_Institution :
Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Chinese Acad. of Sci., Beijing, China
Abstract :
In this letter, the resistive random access memory (RRAM) with metal-insulator-metal structure is investigated for the first time under radiation conditions. The fabricated Cu-doped HfO2-based RRAM devices are found to have immunity from 60Co γ ray of various dose ranges. The basic RRAM parameters such as high-resistance state, low-resistance state, SET/RESET voltages, operation speed, and endurance have nearly no degradation after 60Co γ ray treatment with a total dose as high as 3.6 × 105 rad (Si). Furthermore, a retention characteristic of 105 s is also achieved during radiation. The highly stable characteristics of Cu-doped HfO2 -based RRAM devices under radiation provide RRAM a great potential for aerospace and nuclear applications.
Keywords :
MIM structures; electric resistance; radiation hardening (electronics); random-access storage; HfO2:Cu; RRAM device; RRAM parameter; aerospace application; high-resistance state; highly stable radiation-hardened resistive-switching memory; low-resistance state; metal-insulator-metal structure; nuclear application; radiation condition; resistive random access memory; retention characteristic; Copper; Ions; Nonvolatile memory; Radiation; Radiation effects; Random access memory; Silicon; $gamma$ ray; Conductive filament; radiation; resistive random access memory (RRAM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2081340
