Low Surface Recombination in InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors

Author

Wang, Sheng-Yu ; Chiang, Pei-Yi ; Chang, Chao-Min ; Chen, Shu-Han ; Chyi, Jen-Inn

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan

Volume

31

Issue

12

fYear

2010

Firstpage

1401

Lastpage

1403

Abstract

The surface recombination behavior of a series of InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistors (HBTs) is investigated. It is found that the InGaAsSb base HBTs have lower emitter periphery surface recombination current density (K_SURF) than the HBT with an InGaAs base. It is attributed to the type-I band lineup at the B-E junction and the surface pining of the antimonide base layer. A lower S₀ is deduced for the DHBT with a higher Sb content in the InGaAsSb base.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; surface recombination; B-E junction; InAlAs-InGaAsSb-InGaAs; antimonide base layer; double heterojunction bipolar transistors; low surface recombination; lower emitter periphery surface recombination current density; surface pining; type-I band lineup; Current density; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Random access memory; Spontaneous emission; Heterojunction bipolar transistors (HBTs); InAlAs/InGaAsSb; Type-II B/C junction;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2081342

Filename

5613914