Title :
Low Surface Recombination in InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors
Author :
Wang, Sheng-Yu ; Chiang, Pei-Yi ; Chang, Chao-Min ; Chen, Shu-Han ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Abstract :
The surface recombination behavior of a series of InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistors (HBTs) is investigated. It is found that the InGaAsSb base HBTs have lower emitter periphery surface recombination current density (KSURF) than the HBT with an InGaAs base. It is attributed to the type-I band lineup at the B-E junction and the surface pining of the antimonide base layer. A lower S0 is deduced for the DHBT with a higher Sb content in the InGaAsSb base.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; surface recombination; B-E junction; InAlAs-InGaAsSb-InGaAs; antimonide base layer; double heterojunction bipolar transistors; low surface recombination; lower emitter periphery surface recombination current density; surface pining; type-I band lineup; Current density; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Random access memory; Spontaneous emission; Heterojunction bipolar transistors (HBTs); InAlAs/InGaAsSb; Type-II B/C junction;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2081342
